A Phase Change Memory as a Secure Main Memory

A reliable, secure phase-change memory as a main memory

Towards Phase Change Memory as a Secure Main Memory

Phase change memory (PCM) technology appears as more scalable than DRAM technology. As PCM exhibits access time slightly longer but in the same range as DRAMs, several recent studies have proposed to use PCMs for designing main memory systems. Unfortunately PCM technology suffers from a limited write endurance; typically each memory cell can be only be written a large but still limited number o...

Interfacial phase-change memory.

Phase-change memory technology relies on the electrical and optical properties of certain materials changing substantially when the atomic structure of the material is altered by heating or some other excitation process. For example, switching the composite Ge(2)Sb(2)Te(5) (GST) alloy from its covalently bonded amorphous phase to its resonantly bonded metastable cubic crystalline phase decrease...

A Single Element Phase Change Memory

We report a fast single element nonvolatile memory that employs amorphous to crystalline phase change. Temperature change is induced within a single electronic element in confined geometry transistors to cause the phase change. This novel phase change memory (PCM) operates without the need for charge transport through insulator films for charge storage in a floating gate. GeSbTe (GST) was emplo...

Projected phase-change memory devices

Nanoscale memory devices, whose resistance depends on the history of the electric signals applied, could become critical building blocks in new computing paradigms, such as brain-inspired computing and memcomputing. However, there are key challenges to overcome, such as the high programming power required, noise and resistance drift. Here, to address these, we present the concept of a projected...